Datasheet > WMBT5551LT1

WMBT5551LT1

更新时间： 2024-11-07 22:10:03

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
2页	43K
描述
NPN Silicon Transistor

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数据手册

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WMBT5551LT1 数据手册

WMBT5551LT1

COLLECTOR

NPN Silicon Transistor

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

CEO

CBO

EBO

160

Vdc

180

SOT–23 (TO–236AB)

6.0

Vdc

600

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

556

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBT5550LT1 = M1F; MMBT5551LT1 = G1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(3)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

—

160

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

Vdc

(BR)CBO

—

180

6.0

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)EBO

—

Collector Cutoff Current

CBO

—

nAdc

= 120 Vdc, I = 0)

µAdc

= 120 Vdc, I = 0, T = 100°C)

Emitter Cutoff Current

(V = .0 Vdc, I = 0)

nAdc

EBO

—

Wing Shing Computer Components Co., (H.K .)L td.

Homepage: http: / / www.wingshing.com

Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8153

E-mail: wsccltd@ hk star.com

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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