Datasheet > WMBT3906

WMBT3906

更新时间： 2024-09-17 22:13:51

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	70K
描述
PNP EPITAXIAL SILICON TRANSISTORS

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中文翻译

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数据手册

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WMBT3906 数据手册

PNP EPITAXIAL SILICON TRANSISTORS

WMBT3906

High Voltage Transistor

SOT——23

Power Dissipation: 225mW

Collector Current: Max.

1. BASE

0.2A

2. EMITTER

3. COLLECTOR

GUARANTEED PROBED CHARACTERISTICS (T_A=25℃)

Limits

Characteristic

Symbol

BV_CEO

BV_CBO

BV_EBO

I_CEX

Test Conditions

I_C=1mA

Units

MIN.

MAX.

Collector-emitter

Breakdown Voltage

Collector-Base

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-off

Current

I_C=100µA

I_E=10µA

5.0

V_CE=30V, V_BE=3V

h_FE1

h_FE2

V_CE=1V, I_C=100µA

V_CE=1V, I_C=1mA

DC Current Gain

h_FE3

h_FE4

h_FE5

BV_ESAT1

BV_ESAT2

V_CE(SAT)1

V_CE(SAT)2

f_T

V_CE=1V, I_C=10mA

V_CE=1V, I_C=50mA

V_CE=1V, I_C=100mA

I_C=10mA, I_B=1mA

I_C=50mA,I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10, V_CE=20V f=100MHz

100

300

650

850

950

250

400

MHz

Base-Emitter

Saturation Voltage

Collector-Emitter

Saturation Voltage

Transition Frequency

Collector-Base

250

C_OB

V_CB=5V, f=1MHz

4.5

Capacitance

NOTES: Due to probe testing limitations, only the DC parameters are tested.

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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