Datasheet > WLCT25N280

WLCT25N280

更新时间： 2023-12-06 20:11:25

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	645K
描述
功率金氧半电晶体

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数据手册

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WLCT25N280 数据手册

WLCT25N280-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• High Energy Avalanche

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

1.Gate 2.Drain 3.Source

TO-220FB Plastic Package

Source

Key Parameters

Parameter

BV_DSS

Value

250

Unit

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

280 @ V_GS= 10 V

3.5

mΩ

16.1 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

250

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

Drain Current

I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

12.2

Single Pulse Avalanche Energy ²⁾

E_AS

℃

Power Dissipation

P_tot

125

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

^.1)Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

^.2)Limited by T_J(MAX), starting T_J= 25°C, L = 0.5 mH, R_g= 25 Ω, I_AS= 7 A, V_GS= 10 V.

R_θJA

1 / 7

Dated: 12/09/2023 Rev: 01

12 3 4 5 6 7

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