Datasheet > BAV70DW

BAV70DW

更新时间： 2024-01-23 09:07:31

品牌	Logo	应用领域
威伦 - WILLAS		二极管光电二极管
页数	文件大小	规格书
3页	368K
描述
SOT-363 Plastic-Encapsulate Diodes

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技术参数
数据手册

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BAV70DW 技术参数

生命周期：	Active	零件包装代码：	SC-70
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAV70DW 数据手册

WILLAS

BAV70DW

SOT-363 Plastic-Encapsulate Diodes

SWITCHING DIODE

SOT-363

FEATURES

Fast Switching Speed

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

MAKING: KJA

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

300

Forward Continuous Current

I_FM

I_O

150

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0s

I_FSM

200

Power Dissipation

P_D

R_θJA

T_J

625

150

Thermal Resistance Junction to Ambient

Operating Junction Temperature

Storage Temperature

℃/W

℃

-55~+150

T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V_(BR)

I_R= 2.5µA

V_R=75V

2.5

µA

Reverse voltage leakage current

Forward voltage

I_R

V_R=20V

I_F=1mA

I_F=10mA

I_F=50mA

I_F=150mA

0.025

715

855

1000

1250

V_F

Junction capacitance

Reveres recovery time

C_j

t_rr

V_R=0, f=1MHz

I_F=I_R=10mA,I_rr=0.1×I_R,

R_L=100Ω

2012-12

WILLAS ELECTRONIC CORP.

12 3

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