Datasheet > WGW15G120

WGW15G120

更新时间： 2024-11-07 06:02:07

品牌	Logo	应用领域
稳先微 - WINSEMI		双极性晶体管
页数	文件大小	规格书
7页	350K
描述
Low Loss IGBT

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中文翻译

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数据手册

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WGW15G120 数据手册

WGW15G120

Low Loss IGBT

Features

15A,1200V,V_CE(sat)(Typ.=2.4v)@I_C=15A & Tc=25℃

low Gate charge(Typ.= 85nC)

NPT Technology, Positive temperature coefficient

Low EMI

Pb-free lead plating; RoHS compliant

Applications

General purpose inverter

Frequency converters

Induction Heating(IH)

Uninterrupted Power Supply(UPS)

TO3P(N)

Absolute Maximum Ratings(Tc=25℃)

Symbol

Parameter

Value

Unit

V_CES

1200

Collector-Emitter Voltage

DC Collector Current

Tc=25℃

I_C

Tc=100℃

I_CP

Collector pulse Current

Gate-Emitter Voltage

Short circuit withstand time

Turn-off safe area

T_plimited by T_J

±20

V_GES

t_SC

μs

V_GE=10V,V_CE≤1200V,T_J≤150℃

V_CE≤1200V,T_J≤150℃

P_D

T_J

Total Dissipation

150

Operation Junction Temperature

Storage Temperature

-40 ~ 150

-50 ~ 150

300

℃

T_STG

T_L

Maximum Lead Temperature for Soldering Purposes

Thermal Characteristics

Value

Symbol

Parameter

Unit

Min

Typ

Max

0.6

R_QJC

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

℃/W

Rev.A Aug.2010

12 3 4 5 6 7

中文翻译

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