生命周期: | Obsolete | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
配置: | SINGLE | 最大直流栅极触发电流: | 0.002 mA |
JESD-30 代码: | O-MXDB-D2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 855 A |
断态重复峰值电压: | 3800 V | 重复峰值反向电压: | 18 V |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UNSPECIFIED | 触发设备类型: | GATE TURN-OFF SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG8048S | ETC |
获取价格 |
THYRISTOR|GTO|TO-200VAR74 | |
WG8050S | ETC |
获取价格 |
THYRISTOR|GTO|TO-200VAR74 | |
WG8050S16 | IXYS |
获取价格 |
Gate Turn-Off SCR, 5000V V(DRM), 16V V(RRM), 1 Element | |
WG8052S | ETC |
获取价格 |
THYRISTOR|GTO|TO-200VAR74 | |
WG8052S16 | IXYS |
获取价格 |
Gate Turn-Off SCR, 5200V V(DRM), 16V V(RRM), 1 Element | |
WG8054S | ETC |
获取价格 |
THYRISTOR|GTO|TO-200VAR74 | |
WG8054S16 | IXYS |
获取价格 |
Gate Turn-Off SCR, 5400V V(DRM), 16V V(RRM), 1 Element | |
WG8056S | ETC |
获取价格 |
THYRISTOR|GTO|TO-200VAR74 | |
WG8056S16 | IXYS |
获取价格 |
Gate Turn-Off SCR, 5600V V(DRM), 16V V(RRM), 1 Element | |
WG8058S | ETC |
获取价格 |
THYRISTOR|GTO|TO-200VAR74 |