生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-MXDB-D2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | PEAK TURN-OFF CURRENT IS 1200A |
标称电路换相断开时间: | 80 µs | 配置: | SINGLE |
最大直流栅极触发电流: | 2000 mA | JESD-30 代码: | O-MXDB-D2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1340 A | 断态重复峰值电压: | 2500 V |
重复峰值反向电压: | 1600 V | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UNSPECIFIED |
触发设备类型: | GATE TURN-OFF SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG12025FR17 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1340 A, 2500 V, GATE TURN-OFF SCR | |
WG12025FR19 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2500V V(DRM), 1900V V(RRM), 1 Element | |
WG12025FR22 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2500V V(DRM), 100V V(RRM), 1 Element | |
WG12025FR24 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2500V V(DRM), 200V V(RRM), 1 Element | |
WG12025R | ETC |
获取价格 |
THYRISTOR|GTO|2.5KV V(DRM)|TO-200VAR74 | |
WG12025R02 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1600A I(T)RMS, 2500V V(DRM), 200V V(RRM), 1 Element | |
WG12025R03 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1600 A, 2500 V, GATE TURN-OFF SCR | |
WG12025R05 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1600 A, 2500 V, GATE TURN-OFF SCR | |
WG12025R06 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1600A I(T)RMS, 2500V V(DRM), 600V V(RRM), 1 Element | |
WG12025R08 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1600A I(T)RMS, 2500V V(DRM), 800V V(RRM), 1 Element |