5秒后页面跳转
WG12018R15 PDF预览

WG12018R15

更新时间: 2024-01-17 21:43:26
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
1页 32K
描述
Gate Turn-Off SCR, 1800V V(DRM), 1500V V(RRM), 1 Element

WG12018R15 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:PEAK TURN-OFF CURRENT IS 1200A
配置:SINGLEJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
断态重复峰值电压:1800 V重复峰值反向电压:1500 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:GATE TURN-OFF SCR
Base Number Matches:1

WG12018R15 数据手册

  

与WG12018R15相关器件

型号 品牌 获取价格 描述 数据表
WG12018R16 IXYS

获取价格

Silicon Controlled Rectifier, 1800 V, GATE TURN-OFF SCR
WG12018R17 IXYS

获取价格

Silicon Controlled Rectifier, 1800 V, GATE TURN-OFF SCR
WG12019 IXYS

获取价格

Gate Turn-Off SCR, 1600A I(T)RMS, 1900V V(DRM), 100V V(RRM), 1 Element
WG12019FR IXYS

获取价格

Symmetrical GTO SCR, 1340A I(T)RMS, 1900V V(DRM), 1900V V(RRM), 1 Element
WG12019FR02 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 200V V(RRM), 1 Element
WG12019FR03 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 300V V(RRM), 1 Element
WG12019FR04 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 400V V(RRM), 1 Element
WG12019FR05 IXYS

获取价格

Silicon Controlled Rectifier, 1340 A, 1900 V, GATE TURN-OFF SCR
WG12019FR06 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 600V V(RRM), 1 Element
WG12019FR07 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 700V V(RRM), 1 Element