生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-MXDB-H2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | PEAK TURN-OFF CURRENT IS 900A |
配置: | SINGLE | JESD-30 代码: | O-MXDB-H2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
断态重复峰值电压: | 600 V | 重复峰值反向电压: | 600 V |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UNSPECIFIED | 触发设备类型: | SYMMETRICAL GTO SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG10026R30 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2600 V, GATE TURN-OFF SCR |
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WG10026R32 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2600 V, GATE TURN-OFF SCR |
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WG10026R34 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2600 V, GATE TURN-OFF SCR |
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WG10026R36 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180 A, 2600 V, GATE TURN-OFF SCR |
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WG10026RXX | ETC |
获取价格 |
GATE TURN THYRISTORS |
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WG10026S | ETC |
获取价格 |
THYRISTOR|GTO|2.6KV V(DRM)|TO-200VAR74 |
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WG10026S26 | IXYS |
获取价格 |
Symmetrical GTO SCR, 1065A I(T)RMS, 3400V V(DRM), 18V V(RRM), 1 Element |
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WG10026S28 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1065A I(T)RMS, 3500V V(DRM), 18V V(RRM), 1 Element |
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WG10026S30 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1065A I(T)RMS, 3600V V(DRM), 18V V(RRM), 1 Element |
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WG10026S32 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1065 A, 3700 V, GATE TURN-OFF SCR |
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