Datasheet > WFY6N02

WFY6N02

更新时间： 2024-01-11 09:40:16

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
6页	387K
描述
20V N?Channel MOSFET

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WFY6N02 数据手册

WFY6N02

20V N−Channel MOSFET

Features

■ 6A, 20V, R_DS(on)(Max 40mΩ)@V_GS=4.5V

■ 1.8 V Rated for Low Voltage Gate Drive

■ SOT-23 Surface Mount for Small Footprint

■ Single Pulse Avalanche Energy Rated

■ RoHS compliant

General Description

This MOSFET is produced using Winsemi’s advanced MOS

technology. This latest technology has been especially designed

to minimize on-state resistance, have a high rugged avalanche

characteristics. This devices is specially well suited for Load

switching and PAswitching.

SOT-23

Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_DSS

Drain Source Voltage

I_D

Continuous Drain Current

Drain Current Pulsed

I_DM

P_D

Total Power Dissipation(Note 1)

Gate to Source Voltage

0.3

V_GS

T_J,T_stg

T_L

±12

Junction and Storage Temperature

-55~150

260

℃

Maximum lead Temperature for soldering purposes

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

Thermal Characteristics

Value

Typ

Symbol

Parameter

Units

Min

Max

170

110

Thermal Resistance, Junction-to-Ambient(Note 1)

Thermal Resistance, Junction-to-Ambient(Note 2)

℃/W

R_QJA

300

Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Mounted on a ceramic board (1000mm²×0.8mm) 1units)

Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.

Rev. A Mar.2010-H04F

P12-3

12 3 4 5 6

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