Datasheet > WFY5P03

WFY5P03

更新时间： 2024-09-24 07:20:11

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	318K
描述
-30V P?Channel MOSFET

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WFY5P03 数据手册

WFY5P03

-30V P−Channel MOSFET

Features

■ -4.3A, -30V, R_DS(on)(Max 58mΩ)@V_GS=-4.5V

■ -2.5V Rated for Low Voltage Gate Drive

■ SOT-23 Surface Mount for Small Footprint

■ Single Pulse Avalanche Energy Rated

General Description

This Power MOSFET is produced using Winsemi’s

advanced MOS technology. This latest technology has

been especially designed to minimize on-state resistance,

have a high rugged avalanche characteristics. This devices is

specially well suited for Load/Power

Management

for

Portables

Protection

and

Computing, Charging Circuits and Battery

Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_DSS

Drain Source Voltage

-30

V_GSS

Gate-to-Source Voltage

Continuous Drain Current

±12

I_D

-4.3

-25

I_DM

Drain Current Pulsed PW≤10us,duty cycle≤1%

Mounted on a ceramic board (1000mm²× 0.8mm)

lunit

P_D

Allowable Power Dissipation

0.25

Mounted on a ceramic board (1000mm²× 0.8mm)

P_T

Total Dissipation

0.3

150

℃

T_ch

T_stg

Channel Temperature

Storage Temperature

-55~150

Rev. A Jan 2012

P03-3

12 3 4 5

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