WFY3P02
−20V, P−Channel MOSFET
,
Features
■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
D
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
G
S
SOT-23
Marking: H03F
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain Source Voltage
-20
V
Tc=25℃
−2.8
Steady State
ID
Continuous Drain Current(Note 1)
A
Tc=85℃
Tc=25℃
-1.7
t≤10s
Steady State
t≤10s
-3.2
0.80
1.25
-1.8
-1.3
0.42
PD
ID
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Tc=25℃
W
A
Tc=25℃
Tc=85℃
Tc=25℃
Steady State
t=10s
PD
Total Power Dissipation(Note 2)
Drain Current Pulsed
W
A
IDM
-7.5
±8
VGS
Gate to Source Voltage
V
V
ESD
ESD Capability (Note 3)
C=100pF,RS = 1500Ω
225
TJ, Tstg
TL
Junction and Storage Temperature
-55~150
260
℃
℃
Maximum lead Temperature for soldering purposes
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Value
Typ
-
Symbol
Parameter
Units
Min
-
Max
170
110
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
℃/W
℃/W
℃/W
300
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010-H03F
P03-3
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