Datasheet > WFY3N02

WFY3N02

更新时间： 2024-02-07 23:18:14

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描述
20V N−Channel MOSFET

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WFY3N02 数据手册

WFY3N02

20V N−Channel MOSFET

Features

■ 2.8A, 20V, R_DS(on)(Max 65mΩ)@V_GS=-4.5V

■ 1.2 V Rated for Low Voltage Gate Drive

■ SOT-23 Surface Mount for Small Footprint

■ Single Pulse Avalanche Energy Rated

General Description

This Power MOSFET is produced using Winsemi’s advanced

MOS technology. This latest technology has been especially

designed to minimize on-state resistance, have a high rugged

avalanche characteristics. This devices is specially well suited for

Load switching and PA switching.

SOT-23

Marking: H04F

Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_DSS

Drain Source Voltage

Continuous Drain Current

Drain Current Pulsed

I_D

2.8

I_DM

0.9

P_D

Total Power Dissipation(Note 1)

Tc=75℃

0.6

V_GS

Gate to Source Voltage

ESD Capability (Note 3)

±8

ESD

T_J,T_stg

T_L

C=100pF,R_S= 1500Ω

225

-55~150

260

Junction and Storage Temperature

℃

Maximum lead Temperature for soldering purposes

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

Thermal Characteristics

Value

Typ

Symbol

Parameter

Units

Min

Max

170

110

R_QJA

Thermal Resistance, Junction-to-Ambient(Note 1)

Thermal Resistance, Junction-to-Ambient(Note 2)

℃/W

300

Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.

Note 3: ESD Rating Information: HBM Class 0

Rev. A Mar.2010-H04F

P03-3

12 3 4 5 6

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