Datasheet > WFY03DN50

WFY03DN50

更新时间： 2024-01-12 03:03:15

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	306K
描述
500V N?Channel Depletion-Mode DMOSFET

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WFY03DN50 数据手册

WFY03DN50

500V N−Channel Depletion-Mode DMOSFET

Features

■ 30mA, 500V, R_DS(on)(Max750Ω)@V_GS=0,I_D=3.0mA

■ Free from secondary breakdown

■ Low power drive requirement

■ Integral source-drain diode

■ Ease of paralleling

■ Excellent thermal stability

■ High input impedance and low C_ISS

General Description

The WFY03DN50 is a high voltage N-channel depletion

mode (normally-on) transistor utilizing Winsemi’s lateral DMOS

technology.

The WFY03DN50 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and amplification.

SOT-23

Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_DSS

Drain Source Voltage

500

I_D

Continuous Drain Current(Note 1)

Tc=75℃

I_DM

P_D

Drain Current Pulsed

Total Power Dissipation

Gate to Source Voltage

120

0.5

±20

V_GS

dv/dt

T_J,

Peak Diode Recovery Voltage Rising Rate

Junction Temperature

V/ns

℃

150

T_stg

T_L

Storage Temperature

-55~150

300

Maximum lead Temperature for soldering purposes

℃

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress

limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is

not implied, damage may occur and reliability may be affected.

Thermal Characteristics

Value

Typ

Symbol

Parameter

Units

Min

Max

250

200

R_QJA

R_QJC

Thermal Resistance, Junction-to-Ambient(Note 2)

Thermal Resistance, Junction-to-Case(Note 2)

℃/W

Note 1: I_D(continuous) is limited by max rated Tj.

Note 2:Mounted on FR4 board, 25mm x 25mm x 1.57mm

Rev. A/0 Mar.2012

T22-1

12 3 4 5

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