Datasheet > WFW9N90W

WFW9N90W

更新时间： 2024-09-24 07:20:23

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稳先微 - WINSEMI		/
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7页	538K
描述
Silicon N-Channel MOSFET

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WFW9N90W 数据手册

WFW9N90W

Silicon N-Channel MOSFET

Features

■ 9A,900V, R_DS(on)(Max1.35Ω)@V_GS=10V

■ Ultra-low Gate charge(Typical 58nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

General Description

This N-Channel enhancement mode power field effect

transistors are produced using Winsemi's proprietary, planar

stripe ,DMOS technology. This advanced technology has

been especially tailored to minimize on-state resistance,

provide superior switching performance, and withstand high

energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power

supplies.

Absolute Maximum Ratings

Symbol

Parameter

Value

900

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

5.7

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

663

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Derating Factor above 25℃

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

V/ ns

E_AR

dv/dt

4.5

P_D

0.54

-55~150

300

W/℃

℃

T_J,T_stg

T_L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

1.85

62.5

R_QJC

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

℃/W

Rev.A Oct.2010

12 3 4 5 6 7

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