Datasheet > WFW9N90

WFW9N90

更新时间： 2024-09-24 06:01:43

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描述
Silicon N-Channel MOSFET

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WFW9N90 数据手册

WFW9N90

Silicon N-Channel MOSFET

Features

9A,900V,R_DS(on)(Max1.4Ω)@V_GS=10V

Ultra-low Gate charge(Typical 58nC)

Fast Switching Capability

100%Avalanche Tested

Maximum Junction Temperature Range(150℃)

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Winsemi’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

Absolute Maximum Ratings

Symbol

Parameter

Value

900

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

5.7

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

663

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

V/ ns

E_AR

dv/dt

P_D

4.5

150

-55~150

300

T_J,T_stg

T_L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

0.83

R_QJC

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

℃/W

Rev.A Aug.2010

12 3 4 5 6 7

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