Datasheet > WFW24N50W

WFW24N50W

更新时间： 2024-09-24 07:20:11

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描述
Silicon N-Channel MOSFET

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WFW24N50W 数据手册

WFW24N50W

Silicon N-Channel MOSFET

Features

■ 24A,500V,R_DS(on)(Max0.19Ω)@V_GS=10V

■ Ultra-low Gate charge(Typical 90nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

General Description

This N-Channel enhancement mode power field effect transistors

are produced using Winsemi's proprietary, planar stripe ,DMOS

technology. This advanced technology has been especially tailored

to minimize on-state resistance

, provide superior switching

performance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high

efficiency switch mode power supplies.

Absolute Maximum Ratings

Symbol

Parameter

Value

500

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

15.2

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

TotalPower Dissipation(@Tc=25℃)

Derating Factor above 25℃

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

1100

V/ ns

E_AR

dv/dt

4.5

290

P_D

2.33

-55~150

300

W/℃

℃

T_J,T_stg

T_L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

0.43

R_QJC

R_QCS

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Case-to-Sink

0.24

℃/W

Thermal Resistance , Junction-to -Ambient

Rev.A Aug.2010

12 3 4 5 6 7

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