Datasheet > WFW20N60W

WFW20N60W

更新时间： 2022-09-11 11:13:18

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
3页	284K
描述
Silicon N-Channel MOSFET

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WFW20N60W 数据手册

WFW20N60W

Silicon N-Channel MOSFET

Features

�

20A,600V,R_DS(on)(Max0.39Ω)@V_GS=10V

Ultra-low Gate charge(Typical 150nC)

Fast Switching Capability

100%Avalanche Tested

Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is produced using Winsemi's advancedplanar

stripe,VDMOS technology.this latest technology has beenespecially

designed to minimize on-state resistance, have a high rugged avalanche

characteristics .This devices is specially wellsuited for AC-DC switching

power supplies, DC-DC powerConverters high voltage H-bridge motor

drive PWM

Absolute Maximum Ratings

Symbol

Parameter

Value

600

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

I_DM

V_GS

E_AR

(Note1)

Gate to Source Voltage

±30

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Junction and Storage Temperature

Channel Temperature

(Note1)

(Note3)

V/ ns

dv/dt

P_D

5.0

300

-55~150

300

T_J,T_stg

T_L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

R_QJC

Thermal Resistance , Junction -to -Case

0.25

℃/W

Rev.A Mar.2011

12 3

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