Datasheet > WFW18N50N

WFW18N50N

更新时间： 2024-02-17 21:34:30

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稳先微 - WINSEMI		/
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7页	800K
描述
Silicon N-Channel MOSFET

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WFW18N50N 数据手册

WFW18N50N

Silicon N-Channel MOSFET

Features

■ 18A,500V,R_DS(on)(Max0.27Ω)@V_GS=10V

■ Ultra-low Gate charge(Typical 42nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is produced using Winsemi's advanced planar

stripe,VDMOS technology.this latest technology has been especially

designed to minimize on-state resistance, have a high rugged

avalanche characteristics .This devices is specially wellsuited for

AC-DC switching power supplies, DC-DC power Converters high

voltage H-bridge motor drive PWM

Absolute Maximum Ratings

Symbol

Parameter

Value

500

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

12.7

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

330

V/ ns

E_AR

dv/dt

P_D

27.7

4.5

280

T_J,T_stg

T_L

-55~150

300

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

0.45

R_QJC

R_QCS

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Case-to-Sink

0.24

℃/W

Thermal Resistance , Junction-to -Ambient

Rev.A Aug.2010

12 3 4 5 6 7

中文翻译

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