Datasheet > WFP4N60

WFP4N60

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
威德姆 - WISDOM		/
页数	文件大小	规格书
7页	746K
描述
N-Channel MOSFET

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WFP4N60 数据手册

Wisdom Semiconductor

WFP4N60

N-Channel MOSFET

Features

{

2. Drain

Symbol

■ R

(Max 2.5 Ω )@V =10V

DS(on)

●

■ Gate Charge (Typical 15nC)

◀

▲

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

●

1. Gate

{

●

■ Maximum Junction Temperature Range (150°C)

3. Source

{

General Description

TO-220

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge topology.

Absolute Maximum Ratings

Symbol

Parameter

Value

600

Units

V_DSS

Drain to Source Voltage

Continuous Drain Current(@T_C= 25°C)

Continuous Drain Current(@T_C= 100°C)

Drain Current Pulsed

4.0

I_D

2.5

I_DM

(Note 1)

V_GS

Gate to Source Voltage

±30

240

E_AS

E_AR

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 3)

dv/dt

4.5

V/ns

Total Power Dissipation(@T_C= 25 °C)

100

P_D

Derating Factor above 25 °C

0.8

W/°C

°C

_STG,T_J

T_L

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Value

Symbol

Parameter

Units

Min.

Typ.

Max.

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case to Sink

0.5

1.25

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

12 3 4 5 6 7

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