Datasheet > WFF634

WFF634

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
威德姆 - WISDOM		/
页数	文件大小	规格书
7页	800K
描述
N-Channel MOSFET

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WFF634 数据手册

Wisdom Semiconductor

WFF634

N-Channel MOSFET

Features

■ R_DS(on)(Max 0.45 Ω )@V_GS=10V

{

2. Drain

Symbol

●

■ Gate Charge (Typical 29nC)

◀

▲

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

●

1. Gate

{

●

■ Maximum Junction Temperature Range (150°C)

3. Source

{

General Description

TO-220F

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switching DC/DC converters, switch mode power

supply, DC-AC converters for uninterruped power supply, motor

control.

Absolute Maximum Ratings

(

Drain current limited by junction temperature)

Symbol

Parameter

Value

250

Units

V_DSS

Drain to Source Voltage

Continuous Drain Current(@T_C= 25°C)

Continuous Drain Current(@T_C= 100°C)

Drain Current Pulsed

8.1*

I_D

5.1*

I_DM

(Note 1)

32.4*

V_GS

Gate to Source Voltage

±25

200

7.4

5.5

E_AS

E_AR

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 3)

dv/dt

V/ns

Total Power Dissipation(@T_C= 25 °C)

P_D

Derating Factor above 25 °C

0.3

W/°C

°C

T_STG,T_J

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

300

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

T_L

°C

Thermal Characteristics

Value

Symbol

Parameter

Units

Min.

Typ.

Max.

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

3.29

62.5

°C/W

12 3 4 5 6 7

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