WF1M32B-XXX3
1Mx32 3.3V NOR FLASH MODULE
FEATURES
Access Times of 100, 120, 150ns
Low Power CMOS
Packaging
Embedded Erase and Program Algorithms
Built-in Decoupling Caps for Low Noise Operation
Erase Suspend/Resume
• 66 pin, PGA Type (H1), 1.075" square, Hermetic Ceramic
HIP (Package 404)
• 68 lead, Low Profile CQFP (G2U), 3.5mm (0.140") square
(Package 510)
• Supports reading data from or programing data to a
sector not being erased
1,000,000 Erase/Program Cycles
Sector Architecture
Low Current Consumption
Typical values at 5MHz:
• One 16KByte, two 8KBytes, one 32KByte, and fifteen
64kBytes (each chip)
• 40mA Active Read Current
• 80mA Program/Erase Current
Weight
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
• WF1M32B-XG2UX3 -8 grams typical
• WF1M32B-XH1X3 -13 grams typical
Note: For programming information refer to Flash Programming 8M3 Application Note.
Organized as 1Mx32
Commercial, Industrial and Military Temperature Ranges
3.3 Volt for Read and Write Operations
Boot Code Sector Architecture (Bottom)
This product is subject to change without notice.
PIN CONFIGURATION FOR WF1M32B-XH1X3
TOP VIEW
PIN DESCRIPTION
I/O0-31
A0-19
WE#
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Selects
Output Enable
Reset
1
12
23
34
45
56
I/O8
I/O9
I/O10
A14
A16
A11
A0
RESET#
CS2#
GND
I/O11
A10
I/O15
I/O14
I/O13
I/O12
OE#
A17
I/O24
I/O25
I/O26
A7
VCC
CS4#
NC
I/O31
I/O30
I/O29
I/O28
A1
CS1-4#
OE#
RESET#
VCC
I/O27
A4
Power Supply
Ground
GND
A12
NC
Not Connected
A9
NC
A5
A2
A15
WE#
I/O7
A13
A6
A3
BLOCK DIAGRAM
A18
I/O0
I/O1
I/O2
VCC
A8
NC
I/O23
I/O22
I/O21
I/O20
CS1#
CS2#
CS3#
CS4#
CS1#
A19
I/O6
I/O16
I/O17
I/O18
CS3#
GND
I/O19
RESET#
WE#
OE#
I/O5
A0-19
I/O3
I/O4
1M x 8
1M x 8
1M x 8
1M x 8
8
11
22
33
44
55
66
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2016 © 2016 Microsemi Corporation. All rights reserved.
Rev. 16
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp