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2N4003K PDF预览

2N4003K

更新时间: 2024-01-05 21:27:33
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
6页 1029K
描述
N-Channel Enhancement Mode Power MOSFET

2N4003K 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2N4003K 数据手册

 浏览型号2N4003K的Datasheet PDF文件第2页浏览型号2N4003K的Datasheet PDF文件第3页浏览型号2N4003K的Datasheet PDF文件第4页浏览型号2N4003K的Datasheet PDF文件第5页浏览型号2N4003K的Datasheet PDF文件第6页 
2N4003K  
3 DRAIN  
N-Channel Enhancement  
Mode Power MOSFET  
DRAIN CURRENT  
0.5 AMPERES  
1
GATE  
P b  
Lead(Pb)-Free  
*
DRAIN SOUCE VOLTAGE  
30 VOLTAGE  
* Gate  
Pretection  
Diode  
Features:  
2
SOURCE  
* Low Gate Voltage Threshold Vgs(th)  
to Facilitate Drive Circuit Design.  
* Low Gate Charge for Fast Switching.  
* ESD Protected Gate.  
3
* Minimum Breakdown Voltage Rating of 30V.  
1
2
Application:  
* Level Shifters  
* Level Switches  
SOT-23  
* Low Side Load Switches  
* Portable Applications  
Maximum Ratings(TA=25℃ Unless Otherwise Specified)  
Rating  
Symbol  
Value  
30  
Unit  
Drain-Source Voltage  
VDS  
VGS  
V
20  
Gate-Source Voltage  
1 ,Steady State  
(TA=25°C)  
(TA=85°C)  
Continuous Drain Current  
0.5  
ID  
PD  
ID  
A
W
A
0.37  
0.69  
Power Dissipation1  
,Steady State  
,t<10s  
Continuous Drain Current1  
(TA=25°C)  
(TA=85°C)  
0.56  
0.40  
0.83  
Power Dissipation1  
W
A
PD  
,t<5s  
IDM  
1.7  
Pulsed Drain Current  
Maximum Junction-ambient  
,Steady State1  
,t<10s1  
180  
150  
300  
RθJA  
°C/W  
,Steady State2  
Operating Junction Temperature Range  
Storage Temperature Range  
+150  
-55~+150  
1.0  
°C  
°C  
A
TJ  
Tstg  
Source Current (Body Diode)  
I S  
Lead Temperature for Soldering Purposes (1/8” from case 10s)  
260  
°C  
TL  
Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
Device Marking  
2N4003K = TR8  
WEITRON  
http://www.weitron.com.tw  
1/6  
08-Sep-09  

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