是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | BGA, | Reach Compliance Code: | compliant |
风险等级: | 5.79 | 访问模式: | MULTI BANK PAGE BURST |
最长访问时间: | 5.5 ns | 其他特性: | AUTO REFRESH |
JESD-30 代码: | S-PBGA-B219 | 内存密度: | 1073741824 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 64 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 219 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 16MX64 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | BALL |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WEDPN16M64VR-100B2C | WEDC |
获取价格 |
16Mx64 REGISTERED SYNCHRONOUS DRAM | |
WEDPN16M64VR-100B2C | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 25 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64VR-100B2I | WEDC |
获取价格 |
16Mx64 REGISTERED SYNCHRONOUS DRAM | |
WEDPN16M64VR-100B2I | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 25 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64VR-100B2M | WEDC |
获取价格 |
16Mx64 REGISTERED SYNCHRONOUS DRAM | |
WEDPN16M64VR-100B2M | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 25 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64VR-100BC | WEDC |
获取价格 |
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | |
WEDPN16M64VR-100BI | MICROSEMI |
获取价格 |
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | |
WEDPN16M64VR-100BM | WEDC |
获取价格 |
Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 | |
WEDPN16M64VR-125B2C | WEDC |
获取价格 |
16Mx64 REGISTERED SYNCHRONOUS DRAM |