是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 219 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.32 | 风险等级: | 5.49 |
访问模式: | MULTI BANK PAGE BURST | 最长访问时间: | 6 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | S-PBGA-B219 |
内存密度: | 1073741824 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 64 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 219 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 16MX64 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
峰值回流温度(摄氏度): | 225 | 认证状态: | Not Qualified |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WEDPN16M64V-125B2M | MICROSEMI |
获取价格 |
Synchronous DRAM, 16MX64, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-125B2M | WEDC |
获取价格 |
16Mx64 Synchronous DRAM | |
WEDPN16M64V-125B2M | MERCURY |
获取价格 |
Synchronous DRAM, 16MX64, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-133B2C | WEDC |
获取价格 |
16Mx64 Synchronous DRAM | |
WEDPN16M64V-133B2C | MERCURY |
获取价格 |
Synchronous DRAM, 16MX64, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-133B2C | MICROSEMI |
获取价格 |
Synchronous DRAM, 16MX64, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-133B2I | WEDC |
获取价格 |
16Mx64 Synchronous DRAM | |
WEDPN16M64V-133B2I | MERCURY |
获取价格 |
Synchronous DRAM, 16MX64, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-133B2I | MICROSEMI |
获取价格 |
Synchronous DRAM, 16MX64, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-133B2M | WEDC |
获取价格 |
16Mx64 Synchronous DRAM |