是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 119 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.85 |
最长访问时间: | 70 ns | 其他特性: | ALSO CONFIGURABLE AS 8M X 16 OR 16M X 8 |
备用内存宽度: | 32 | JESD-30 代码: | S-PBGA-B119 |
内存密度: | 134217728 bit | 内存集成电路类型: | FLASH MODULE |
内存宽度: | 64 | 功能数量: | 1 |
端子数量: | 119 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 2MX64 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 编程电压: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 7.56 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WEDPF2M64B-70BM3 | MICROSEMI |
获取价格 |
Flash Module, 2MX64, 70ns, PBGA119, STACKED TSOP, BGA-119 | |
WEDPN16M64V-100B2C | WEDC |
获取价格 |
16Mx64 Synchronous DRAM | |
WEDPN16M64V-100B2C | MICROSEMI |
获取价格 |
Synchronous DRAM, 16MX64, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-100B2C | MERCURY |
获取价格 |
Synchronous DRAM, 16MX64, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-100B2I | WEDC |
获取价格 |
16Mx64 Synchronous DRAM | |
WEDPN16M64V-100B2I | MICROSEMI |
获取价格 |
Synchronous DRAM, 16MX64, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-100B2I | MERCURY |
获取价格 |
Synchronous DRAM, 16MX64, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-100B2M | WEDC |
获取价格 |
16Mx64 Synchronous DRAM | |
WEDPN16M64V-100B2M | MERCURY |
获取价格 |
Synchronous DRAM, 16MX64, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | |
WEDPN16M64V-100B2M | MICROSEMI |
获取价格 |
Synchronous DRAM, 16MX64, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 |