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WE256K8150CC

更新时间: 2024-11-06 07:50:11
品牌 Logo 应用领域
玛居礼 - MERCURY 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 1258K
描述
EEPROM Module, 256KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, DUAL CAVITY, BOTTOM BRAZED, CERAMIC, DIP-32

WE256K8150CC 数据手册

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WE512K8, WE256K8,  
WE128K8-XCX  
512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091  
512Kx8 BIT CMOS EEPROM MODULE  
FEATURES  
 Read Access Times of 150, 200, 250, 300ns  
 Automatic Page Write Operation  
 JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package  
• Internal Address and Data Latches for  
• 512 Bytes, 1 to 128 Bytes/Row, Four Pages  
 Page Write Cycle Time 10mS Max.  
 Data Polling for End of Write Detection  
 Hardware and Software Data Protection  
 TTL Compatible Inputs and Outputs  
300)  
 Commercial, Industrial and Military Temperature Ranges  
 MIL-STD-883 Compliant Devices Available  
 Write Endurance 10,000 Cycles  
 Data Retention at 25°C, 10 Years  
 Low Power CMOS Operation:  
• 3mA Standby Typical/100mA Operating Maximum  
FIGURE 1 – PIN CONFIGURATION  
TOP VIEW  
PIN DESCRIPTION  
A0-18  
I/O0-7  
CS#  
OE#  
WE#  
VCC  
Address Inputs  
Data Input/Output  
Chip Select  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
A18  
A16  
A15  
A12  
A7  
1
2
3
4
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
VCC  
WE#  
A17  
A14  
A13  
A8  
VSS  
BLOCK DIAGRAM  
5
A6  
6
A0-16  
I/O0-7  
A5  
7
A9  
A4  
A3  
A2  
A1  
8
9
A11  
OE#  
A10  
CS#  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
WE#  
OE#  
10  
11  
12  
13  
14  
15  
16  
A0  
128K x 8  
128K x 8  
128K x 8  
128K x 8  
I/O0  
I/O1  
I/O2  
VSS  
A17  
A18  
Decoder  
CS#  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 4  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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