Datasheet > WDM6E4D120LS-CH

WDM6E4D120LS-CH

更新时间： 2024-11-21 14:52:03

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	668K
描述
功率金氧半电晶体

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WDM6E4D120LS-CH 数据手册

WDM6E4D120LS-CH

Dual N-Channel Enhancement Mode MOSFET

Features

• AEC-Q101 Qualified

• Surface-mounted package

• Halogen and Antimony Free(HAF),

RoHS compliant

Applications

Q1:1.Source 2.Gate 7.Drain 8.Drain

Q2:3.Source 4.Gate 5.Drain 6.Drain

DFN5060 Plastic Package

• Load switch

• PWM applications

• LCD TV CCFL inverter

Key Parameters(Q1/Q2)

Parameter

BV_DSS

Value

Unit

13.5 @ V_GS= 10 V

18 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

15 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified) (Q1/Q2)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

Drain Current

I_D

T_c= 100℃

Peak Drain Current Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

160

Single Pulse Avalanche Energy ²⁾

E_AS

℃

Power Dissipation

P_D

T_c= 25℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics (Q1/Q2)

Parameter

Symbol

R_θJC

Max.

5.9

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_AS= 12 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 08/09/2022 Rev: 01

12 3 4 5 6 7

中文翻译

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