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WDM610D180LS-CH PDF预览

WDM610D180LS-CH

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 585K
描述
功率金氧半电晶体

WDM610D180LS-CH 数据手册

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WDM610D180LS-CH  
Dual N-Channel Enhancement Mode MOSFET  
Features  
• Low RDS(ON)  
• AEC-Q101 Qualified  
• Fully Characterized Capacitance and Avalanche  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Q1:1.Source 2.Gate 7.Drain 8.Drain  
Q2:3.Source 4.Gate 5.Drain 6.Drain  
DFN5060 Plastic Package  
Application  
• Synchronous Rectification  
• BLDC Motor drive applications  
• Battery powered circuits  
Key Parameters(Q1/Q2)  
Parameter  
BVDSS  
Value  
100  
Unit  
V
18 @ VGS = 10 V  
24 @ VGS = 4.5 V  
1.9  
RDS(ON) Max  
mΩ  
VGS(th) typ  
Qg typ  
V
22 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)(Q1\Q2)  
Parameter  
Symbol  
VDS  
Value  
100  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
V
Tc = 25℃  
Tc = 100℃  
34  
21  
Continuous Drain Current  
ID  
A
Peak Drain Current, Pulsed 1)  
Avalanche Current  
IDM  
IAS  
130  
17.4  
A
A
Single Pulse Avalanche Energy 2)  
EAS  
15  
mJ  
W
Power Dissipation  
Ptot  
79  
Tc = 25℃  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
Thermal Characteristics(Q1\Q2)  
Parameter  
Symbol  
RθJC  
Max.  
1.9  
3.8  
80  
Unit  
Thermal Resistance from Junction to Case t 10 ms  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, IAS = 17.4 A, VGS = 10 V.  
/W  
/W  
/W  
RθJC  
RθJA  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 15/06/2023 Rev: 02  

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