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WDAT15N120LS PDF预览

WDAT15N120LS

更新时间: 2024-11-06 14:52:43
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 604K
描述
功率金氧半电晶体

WDAT15N120LS 数据手册

 浏览型号WDAT15N120LS的Datasheet PDF文件第2页浏览型号WDAT15N120LS的Datasheet PDF文件第3页浏览型号WDAT15N120LS的Datasheet PDF文件第4页浏览型号WDAT15N120LS的Datasheet PDF文件第5页浏览型号WDAT15N120LS的Datasheet PDF文件第6页浏览型号WDAT15N120LS的Datasheet PDF文件第7页 
WDAT15N120LS-HAF  
N-Channel Enhancement Mode MOSFET  
Features  
Drain  
• High Speed Power Switching  
• Logic level driver  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Gate  
Application  
1.Gate 2.Drain 3.Source  
TO-220F Plastic Package  
Source  
• Synchronous Rectification  
• Hard Switching and High speed Circuit  
• DC-DC in Telecoms and Inductrial  
Key Parameters  
Parameter  
BVDSS  
Value  
150  
Unit  
V
11.5 @ VGS = 10 V  
15 @ VGS = 4.5 V  
1.8  
RDS(ON) Max  
mΩ  
VGS(th) typ  
Qg typ  
V
66 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at T = 25unless otherwise specified)  
a
Symbol  
VDS  
Value  
150  
Unit  
V
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
V
Tc = 25℃  
Tc = 100℃  
74  
46  
ID  
A
Continuous Drain Current  
Peak Drain Current, Pulsed 1)  
Avalanche Current  
IDM  
IAS  
320  
27.3  
A
A
Single Pulse Avalanche Energy 2)  
EAS  
149  
mJ  
W
Ptot  
104.1  
Power Dissipation  
.
Tc = 25℃  
TJ, Tstg  
- 55 to + 150  
Operating Junction and Storage Temperature Range  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
1.2  
Unit  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.  
2) Limited by TJ(MAX), starting TJ = 25°C, L = 0.4 mH, Rg = 25 Ω, IAS = 27.3 A, VGS = 10 V.  
/W  
/W  
RθJA  
45  
®
1 / 7  
Dated: 30/06/2023 Rev: 01  

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