Datasheet > WDAT15N120LS

WDAT15N120LS

更新时间： 2024-11-19 14:52:43

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	604K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WDAT15N120LS 数据手册

WDAT15N120LS-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• High Speed Power Switching

• Logic level driver

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

1.Gate 2.Drain 3.Source

TO-220F Plastic Package

Source

• Synchronous Rectification

• Hard Switching and High speed Circuit

• DC-DC in Telecoms and Inductrial

Key Parameters

Parameter

BV_DSS

Value

150

Unit

11.5 @ V_GS= 10 V

15 @ V_GS= 4.5 V

1.8

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

66 @ V_GS= 10 V

Absolute Maximum Ratings (at T = 25℃ unless otherwise specified)

Symbol

V_DS

Value

150

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

320

27.3

Single Pulse Avalanche Energy ²⁾

E_AS

149

℃

P_tot

104.1

Power Dissipation

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

1.2

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L = 0.4 mH, R_g= 25 Ω, I_AS= 27.3 A, V_GS= 10 V.

℃

R_θJA

1 / 7

Dated: 30/06/2023 Rev: 01

12 3 4 5 6 7

中文翻译

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