Datasheet > WDAT12N070LS

WDAT12N070LS

更新时间： 2024-11-19 14:55:39

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	579K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WDAT12N070LS 数据手册

WDAT12N070LS-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• High Speed Power Switching

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

Source

1.Gate 2.Drain 3.Source

TO-220F Plastic Package

• Hard Switching and High Speed Circuit

• DC/DC in Telecoms and Inductrial

Key Parameters

Parameter

BV_DSS

Value

120

Unit

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

6.2 @ V_GS= 10 V

1.7

mΩ

71.4 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

120

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

360

33.6

Single-Pulsed Avalanche Energy ²⁾

282

℃

E_AS

P_D

22.3

Power Dissipation

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

5.6

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_AS= 33.6 A, V_GS= 10 V.

℃

R_θJA

³⁾Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.

1 / 7

Dated: 20/12/2022 Rev: 01

12 3 4 5 6 7

中文翻译

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