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WDAT12N070LS PDF预览

WDAT12N070LS

更新时间: 2024-11-06 14:55:39
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 579K
描述
功率金氧半电晶体

WDAT12N070LS 数据手册

 浏览型号WDAT12N070LS的Datasheet PDF文件第2页浏览型号WDAT12N070LS的Datasheet PDF文件第3页浏览型号WDAT12N070LS的Datasheet PDF文件第4页浏览型号WDAT12N070LS的Datasheet PDF文件第5页浏览型号WDAT12N070LS的Datasheet PDF文件第6页浏览型号WDAT12N070LS的Datasheet PDF文件第7页 
WDAT12N070LS-HAF  
N-Channel Enhancement Mode MOSFET  
Drain  
Features  
• High Speed Power Switching  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Gate  
Application  
Source  
1.Gate 2.Drain 3.Source  
TO-220F Plastic Package  
• Hard Switching and High Speed Circuit  
• DC/DC in Telecoms and Inductrial  
Key Parameters  
Parameter  
BVDSS  
Value  
120  
Unit  
V
RDS(ON) Max  
VGS(th) typ  
Qg typ  
6.2 @ VGS = 10 V  
1.7  
mΩ  
V
71.4 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
Value  
120  
Unit  
V
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
47  
30  
V
Tc = 25℃  
Tc = 100℃  
ID  
A
Continuous Drain Current  
Peak Drain Current, Pulsed 1)  
Avalanche Current  
IDM  
IAS  
360  
33.6  
A
A
Single-Pulsed Avalanche Energy 2)  
282  
mJ  
W
EAS  
PD  
22.3  
Power Dissipation  
Tc = 25℃  
TJ, Tstg  
- 55 to + 150  
Operating Junction and Storage Temperature Range  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
5.6  
Unit  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.5 mH, Rg = 25 Ω, IAS = 33.6 A, VGS = 10 V.  
/W  
/W  
RθJA  
43  
3) Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.  
®
1 / 7  
Dated: 20/12/2022 Rev: 01  

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