Datasheet > WDAT10N040LS

WDAT10N040LS

更新时间： 2024-11-22 14:53:07

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	636K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WDAT10N040LS 数据手册

WDAT10N040LS-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(on)

• Low Miller Capacitance

• Fully Characterized Capacitance and Avalanche

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

Application

1.Gate 2.Drain 3.Source

TO-220F Plastic Package

• BLDC Motor drive applications

• Battery powered circuits

• Synchronous rectifier applications

• Resonant mode power supplies

Key Parameters

Parameter

BV_DSS

Value

100

Unit

4.8 @ V_GS= 10 V

6.3 @ V_GS= 4.5 V

1.7

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

75 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

400

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

144

℃

P_D

27.2

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.6

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_D= 24 A, V_GS= 10 V.

R_θJA

1 / 8

Dated: 09/08/2021 Rev: 02

12 3 4 5 6 7 8

中文翻译

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