WDAT06N022L-HAF
N-Channel Enhancement Mode MOSFET
Drain
Features
• Low Switching charge
• Low Miller Capacitance
• Halogen and Antimony Free(HAF),
RoHS compliant
Gate
1.Gate 2.Drain 3.Source
TO-220F Plastic Package
Source
Applications
• Battery powered circuits
• Synchronous rectifier applications
Key Parameters
Parameter
BVDSS
Value
60
Unit
V
3 @ VGS = 10 V
3.6 @ VGS = 4.5 V
1.5
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
91 @ VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
± 20
75
47
V
Tc = 25℃
Tc = 100℃
Drain Current
ID
A
Peak Drain Current, Pulsed 1)
Avalanche Current
IDM
IAS
500
58.1
A
A
Single Pulsed Avalanche Energy 2)
EAS
168.7
mJ
W
℃
Power Dissipation
PD
26.7
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
4.6
Unit
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, ID = 58.1 A, VGS = 10 V.
℃
℃
/W
/W
RθJA
45
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Dated: 19/08/2021 Rev: 01