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WCP25C60 PDF预览

WCP25C60

更新时间: 2024-09-17 07:20:11
品牌 Logo 应用领域
稳先微 - WINSEMI 可控硅整流器
页数 文件大小 规格书
5页 416K
描述
Silicon Controlled Rectifiers

WCP25C60 数据手册

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WCP25C60  
Silicon Controlled Rectifiers  
Features  
Repetitive Peak Off-State Voltage:600V  
R.M.S On-State Current (IT(RMS)=25A)  
Low On-State Voltage(1.3V(Typ.)@ITM  
Non-isolaed Type  
)
General Description  
Standard gate triggering SCR is fully isolated package suitable for  
the application where requiring high bidirectional blocking voltage  
capability and also suitable for over voltage protection ,motor control  
circuit in power tool, inrush current limit circuit and heating control  
system.  
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
Average On-State Current  
R.M.S On-State Current  
Condition  
Value  
600  
16  
Units  
V
A
A
IT(AV)  
Half Sine Wave:TC=102°C  
180°conduction Angle  
tp=10ms  
IT(RMS)  
25  
300  
314  
ITSM  
Non Repetitive Surge Peak on-state Current  
A
tp=8.3ms  
I2t  
I2t for Fusing  
t=10ms  
450  
50  
A2s  
A/  
W
di/dt  
PGM  
Critical rate of rise of on-state current  
Forward Peak Gate Power Dissipation  
20  
PG(AV)  
Forward Average Gate Power Dissipation  
Over any 20ms period  
1
W
IFGM  
VRGM  
TJ  
Forward Peak Gate Current  
Reverse Peak Gate Voltage  
Operating Junction Temperature  
Storage Temperature  
5
A
V
5
-40~125  
-40~150  
°C  
°C  
TSTG  
Thermal Characteristics  
Value  
Typ  
Symbol  
Parameter  
Units  
Min  
Max  
RθJc  
RθJA  
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
-
-
1.0  
/W  
/W  
-
-
60  
Rev.A Oct.2010  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.  

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