Datasheet > WCN770N15S

WCN770N15S

更新时间： 2024-09-18 17:00:51

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	759K
描述
MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WCN770N15S 数据手册

WCN770N15S

https://www.omnivision-group.com

Single N-Channel, 150V, 4.5A, Power MOSFET

V_DS(V)

Max. R_DS(on)(mΩ)

63 @ V_GS=10V，I_D=4.1A

76 @ V_GS=6V，I_D=3.3A

150V

Descriptions

This N-Channel MOSFET is produced using advanced Split

Gate Trench process that has been optimized for Rdson，

switching performance and ruggedness.

SOP-8L

Features

⚫

Split Gate Trench Technology

High power and current handing capability in a

widely used surface mount package

Excellent ON resistance

Pin configuration (Top view)

⚫

100% UIS Tested

100% Rg Tested

Applications

770N15 = Device Code

⚫

DC/DC converters

= Year

= Week(A~z)

Primary Switch for Flyback structure POE Power

High Voltage Synchronous Rectifier

Marking

Order information

Device

WCN770N15S

Package

Shipping

SOP-8L

4000/Tape&Reel

Will Semiconductor Ltd.

2022/3/30- Rev. 1.0

12 3 4 5 6 7 8

中文翻译

下载PDF

与WCN770N15S相关器件

型号	品牌	获取价格	描述	数据表
WCP10C60	WINSEMI	获取价格	Silicon Controlled Rectifiers
WCP12C60	WINSEMI	获取价格	Silicon Controlled Rectifiers
WCP20C60	WINSEMI	获取价格	Silicon Controlled Rectifiers
WCP2400-MMCX12	LSTD	获取价格	Alignment notches to prevent rotation
WCP2400-MMCX2	LSTD	获取价格	Alignment notches to prevent rotation
WCP2400-MMCX4	LSTD	获取价格	Alignment notches to prevent rotation
WCP2400-MMCX6	LSTD	获取价格	Alignment notches to prevent rotation
WCP2400-MMCX8	LSTD	获取价格	Alignment notches to prevent rotation
WCP25C60	WINSEMI	获取价格	Silicon Controlled Rectifiers
WCP8C60	WINSEMI	获取价格	Silicon Controlled Rectifiers