Datasheet > WCL072N06DR

WCL072N06DR

更新时间： 2024-09-21 17:00:51

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	884K
描述
MOSFET

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数据手册

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WCL072N06DR 数据手册

WCL072N06DR

https://www.omnivision-group.com

Single N-Channel, 60V, 43A, Power MOSFET

V_DS(V)

Max. R_DS(on)(mΩ)

6.2@ V_GS=10V

9.7@ V_GS=4.5V

PDFN3333-8L

Description

The WCL072N06DR is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_DS(ON)with

low gate charge. This device is suitable for use in DC-

DC conversion, power switch and charging circuit.

Standard Product WCL072N06DR is Pb-free..

Pin configuration (Top view)

Features



Trench Technology

072N06

DRYW

Supper high density cell design

Excellent ON resistance

Low Threshold Voltage

Package PDFN3333-8L

072N06 = Device Code

Special Code

Year

Applications

= Week(A~z)

Marking



DC/DC converters

Power supply converters circuit

Order information

Load/Power Switching for portable device

Device

Package

Shipping

WCL072N06DR-8/TR

PDFN3333-8L

5000/Tape&Reel

Will Semiconductor Ltd.

2022/10/18-Rev.1.0

12 3 4 5 6 7 8

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