Resistors
Wire Bondable
Chip Resistors
WBC Series
ꢀ Discreteꢀorꢀtappedꢀschemaꢁcs
ꢀ MILꢀinspecꢁonꢀavailable
High resistor density
AllꢀpartsꢀareꢀPb-freeꢀandꢀcomplyꢀwithꢀEUꢀDirecꢁveꢀ2011/65/EUꢀ(RoHS2)
The WBC combines IRC’s TaNSil® tantalum nitride thin film technology with silicon substrate processing to
produce an extremely small tantalum nitride thin film technology with silicon substrate processing to produce
an extremely small footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil®
resistor film.
Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-
tions. Custom resistance values, sizes and schematics are available on request from the factory.
Electrical Data
Physical Data
R0202 - Discrete
Absolute Tolerance
to ±±.ꢀ1
to ±ꢁ2ppmꢂ/C
ꢁ2±mW
Absolute TCR
R
Package Power Rating
(@ 70°C)
0.004˝ min bond pad size
0.020˝ 0.001
Rated Operating Voltage
(0.508mm 0.025)
ꢀ±±V
-22/C to +ꢀ2±/C
<-3±dB
√
(not to exceed P x R )
B0202 - Discrete back contact1
Operating Temperature
Noise
Back contact
R
Oxidized Silicon
(ꢀ±KÅ SiOꢁ min)
Top contact
pad chamfered
Substrate Material
Top contact
0.004˝ min bond pad size
0.020˝ 0.001
±.±ꢀ±˝ ±±.±±ꢀ
(±.ꢁ24mm ±±.±ꢁ2)
(0.508mm 0.025)
Substrate Thickness
T0303 - Tapped network ½R + ½R
Aluminum
ꢀ±KÅ minimum
ꢀ2KÅ minimum
Bond Pad
Metallization
Gold1
R±ꢁ±ꢁ and
Silicon
½R
½R
T±3±3
(Al ꢂ Au optional)
Backside
3KÅ Au minimum
ꢀ±KÅ Al minimum
B±ꢁ±ꢁꢀ
0.030˝ 0.001
Silicon Dioxide or
Silicon Nitride
0.004˝ min bond pad size
Passivation
(0.762mm 0.025)
Note 1: Not recommended for new designs
General Note
BI Technologies IRC Welwyn
TT Electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
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05.17