Datasheet > W78M32VP-100BI

W78M32VP-100BI

更新时间： 2024-09-17 03:36:47

品牌	Logo	应用领域
玛居礼 - MERCURY		内存集成电路
页数	文件大小	规格书
47页	1902K
描述
Flash

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W78M32VP-100BI 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
内存集成电路类型：	FLASH	编程电压：	3.3 V
Base Number Matches：	1

W78M32VP-100BI 数据手册

W78M32VP-XBX

8Mx32 NOR Flash 3.3V Page Mode Multi-Chip Package

FEATURES

GENERAL DESCRIPTION

 Access Times of 110, 120ns

The W78M32VP-XBX is a 256Mb, 3.3 volt-only Page Mode

memory device.

 Packaging

The device offers fast page access times allowing high speed

microprocessors to operate without wait states. To eliminate bus

contention the device has separate chip enable (CS#), write enable

(WE#) and output enable (OE#) controls.

• 159 PBGA, 13x22mm – 1.27mm pitch

 Page Mode

• Page size is 8 words: Fast page read access from

random locations within the page.

The device offers uniform 64 Kword (128Kb) Sectors:

 Uniform Sector Architecture

• One hundred twenty-eight 64 kword

 Single power supply operation

• 3 volt read, erase, and program operations

 I/O Control

PAGE MODE FEATURES

The page size is 8 words.After initial page access is accomplished,

the page mode operation provides fast read access speed of

random locations within that page.

STANDARD FLASH MEMORY FEATURES

The device requires a 3.3 volt power supply for both read and write

functions. Internally generated and regulated voltages are provided

for the program and erase operations Page Mode Features

• All input levels (address, control, and DQ input levels)

and outputs are determined by voltage on V_IOinput. V_IO

range is 1.65 to V_CC

 Write operation status bits indicate program and erase

operation completion

DEVICE OPERATIONS

 Suspend and Resume commands for program and erase

This section describes the read, program, erase, handshaking,

and reset features of the Flash devices. Operations are initiated by

writing speciﬁc commands or a sequence with speciﬁc address and

data patterns into the command registers ( see Table 38 and Table

39). The command register itself does not occupy andy addressable

memory location; rather, it is composed of latches that store the

commands, along with the address and data information needed

to execute the command. The contents of the register serves as

input to the internal state machine and the state machine outputs

dictate the function of the device. Writing incorrect address and

data values or writing them in an improper sequence may place

the device in an unknown state, in which case the system must

pull the RESET# pin low or power cycle the device to return the

device to the reading array data mode.

operations

 Hardware Reset# input resets device

 WP#/ACC Input

• Accelerates programming time for greater throughput.

• Protects ﬁrst and last sector regardless of sector

protection settings

 Secured Silicon Sector region

• 128-word sector for permanent, secure identiﬁcation

through an 8-word random Electronic Serial Number,

accessible through a command sequence

• May be programmed and locked at the factory or by the

customer

 100,000 erase cycles per sector typical

 20-year data retention typical

DEVICE OPERATION TABLE

The device must be setup appropriately for each operation. Table

2 describes the required state of each control pin for any particular

operation.

* This product is subject to change without notice.

VersatileIO™ (V_IO) CONTROL

The VersatileIO™ (V_IO) control allows the host system to set the

voltage levels that the device generates and tolerates on all inputs

and outputs (address, control, and DQ signals). V_IOrange is 1.65

to V_CC

For example, a V_IOof 1.65-3.6 volts allows for I/O at the 1.8 or 3

volt levels, driving and receiving signals to and from other 1.8 or

3 V devices on the same data bus.

Continued on page 3

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 15

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

12 3 4 5 6 7...47

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与W78M32VP-100BI相关器件

型号	品牌	获取价格	描述	数据表
W78M32VP-100BM	MERCURY	获取价格	Flash,
W78M32VP110BI	MERCURY	获取价格	Flash, 8MX32, 110ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
W78M32VP-120BI	MERCURY	获取价格	Flash, 8MX32, 120ns, PBGA159, BGA-159
W78M32V-XBX	WEDC	获取价格	8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package
W78M64110SBC	WEDC	获取价格	Flash, 8MX64, 110ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
W78M64110SBI	WEDC	获取价格	Flash, 8MX64, 110ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
W78M64110SBM	WEDC	获取价格	Flash, 8MX64, 110ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
W78M64110SBM	MICROSEMI	获取价格	Flash, 8MX64, 110ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
W78M64120SBC	WEDC	获取价格	Flash, 8MX64, 120ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
W78M64120SBI	WEDC	获取价格	Flash, 8MX64, 120ns, PBGA159, 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159

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