Datasheet > 存储 > 闪存> W764M32V120SBI

W764M32V120SBI

更新时间： 2024-09-17 03:17:31

品牌	Logo	应用领域
WEDC		闪存存储内存集成电路
页数	文件大小	规格书
16页	505K
描述
64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory

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中文翻译

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数据手册

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W764M32V120SBI 数据手册

W764M32V-XSBX

White Electronic Designs

ADVANCED*

64Mx32 Flash Multi-Chip Package

3.0V Page Mode Flash Memory

FEATURES

ꢀ

Single power supply operation

• 3 volt read, erase, and program operations

I/O Control

ꢀ

Software features

• Program Suspend and Resume: read other

sectors before programming operation is

completed

ꢀ

• All input levels (address, control, and DQ input

levels) and outputs are determined by voltage on

• Erase Suspend and Resume: read/program other

sectors before an erase operation is completed

V_IOinput. V_IOrange is 1.65 to V_CC

• Data# polling and toggle bits provide status

ꢀ

Secured Silicon Sector region

• Unlock Bypass Program command reduces overall

multiple-word programming time

• 128-word/256-byte sector for permanent, secure

identiﬁcation through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

• CFI (Common Flash Interface) compliant: allows

host system to identify and accommodate multiple

ﬂash devices

• May be programmed and locked at the factory or

by the customer

ꢀ

Hardware features

ꢀ

Flexible sector architecture

• Advanced Sector Protection

• Five hundred twelve 64 Kword (128 Kbyte) sectors

• WP#/ACC input accelerates programming

time (when high voltage is applied) for greater

throughput during system production. Protects

ﬁrst or last sector regardless of sector protection

settings

• Two hundred ﬁfty-six 64 Kword (128 Kbyte)

sectors

• One hundred twenty-eight 64 Kword (128 Kbyte)

sectors

• Hardware reset input (RESET#) resets device

Compatibility with JEDEC standard

• Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

* This product is under development, is not qualiﬁed or characterized and is subject to

change or cancellation without notice.

• Provides software compatibility for single-power

supply ﬂash, and superior inadvertent write

protection

ꢀ

100,000 erase cycles per sector typical

20-year data retention typical

PERFORMANCE CHARACTERISTICS

ꢀ

High Performance

• 100, 120 ns

• 8-word/16-byte page read buffer

• 25 ns page read times

• 16-word/32-byte write buffer reduces overall

programming time for multiple-word updates

ꢀ

Package option

• 107 BGA, 14mm x 17mm

• 1.0mm pitch

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 2

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...16

中文翻译

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与W764M32V120SBI相关器件

型号	品牌	获取价格	描述	数据表
W764M32V120SBM	WEDC	获取价格	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
W764M32VESSB	WEDC	获取价格	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
W764M32VESSBC	WEDC	获取价格	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
W764M32VESSBI	WEDC	获取价格	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
W764M32VESSBM	WEDC	获取价格	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
W764M32V-XSBX	WEDC	获取价格	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
W766		获取价格	Post top mount
W7675ZC020	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 7680A, 200V V(RRM), Silicon,
W7675ZC080	LITTELFUSE	获取价格	DIODE 7680 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode
W7675ZC100	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 7680A, 1000V V(RRM), Silicon,

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