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W364M72V-100SBC

更新时间： 2024-11-05 20:04:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 时钟动态存储器内存集成电路
页数 文件大小 规格书
14页 1117K
描述
Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

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W364M72V-100SBC 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：BGA, BGA219,16X16,50针数：219
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.36风险等级：5.43
Is Samacsys：N访问模式：FOUR BANK PAGE BURST
最长访问时间：7 ns其他特性：AUTO/SELF REFRESH
最大时钟频率 (fCLK)：100 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B219内存密度：4831838208 bit
内存集成电路类型：SYNCHRONOUS DRAM内存宽度：72
功能数量：1端口数量：1
端子数量：219字数：67108864 words
字数代码：64000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：64MX72输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：BGA
封装等效代码：BGA219,16X16,50封装形状：RECTANGULAR
封装形式：GRID ARRAY峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V认证状态：Not Qualified
刷新周期：8192自我刷新：YES
最大待机电流：0.405 A子类别：DRAMs
最大压摆率：1.035 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：BALL
端子节距：1.27 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

W364M72V-100SBC 数据手册

 浏览型号W364M72V-100SBC的Datasheet PDF文件第2页浏览型号W364M72V-100SBC的Datasheet PDF文件第3页浏览型号W364M72V-100SBC的Datasheet PDF文件第4页浏览型号W364M72V-100SBC的Datasheet PDF文件第5页浏览型号W364M72V-100SBC的Datasheet PDF文件第6页浏览型号W364M72V-100SBC的Datasheet PDF文件第7页 
W364M72V-XSBX  
64Mx72 Synchronous DRAM  
FEATURES  
BENEFITS  
 High Frequency = 100, 125, 133MHz  
 66% SPACE SAVINGS  
 Package:  
 Reduced part count from 9 to 1  
 Reduced I/O count  
• 219 Plastic Ball Grid Array (PBGA), 32 x 25mm  
 3.3V ±0.3V power supply for core and I/Os  
• 55% I/O Reduction  
 Fully Synchronous; all signals registered on positive edge  
 Reduced trace lengths for lower parasitic capacitance  
 Suitable for hi-reliability applications  
 Laminate interposer for optimum TCE match  
of system clock cycle  
 Internal pipelined operation; column address can be  
changed every clock cycle  
 Internal banks for hiding row access/precharge  
 Programmable Burst length 1,2,4,8 or full page  
 8,192 refresh cycles  
GENERAL DESCRIPTION  
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS, dynamic  
random-access, memory using 9 chips containing 512M bits.  
Each chip is internally configured as a quad-bank DRAM with a  
synchronous interface. Each of the chip’s 134,217,728-bit banks  
is organized as 8,192 rows by 2,048 columns by 8 bits.  
 Commercial, Industrial and Military Temperature Ranges  
 Organized as 64M x 72  
 Weight: W364M72V-XSBX - TBD grams typical  
Read and write accesses to the SDRAM are burst oriented;  
accesses start at a selected location and continue for a  
programmed number of locations in a programmed sequence.  
Accesses begin with the registration of an ACTIVE command,  
which is then followed by a READ or WRITE command. The  
address bits registered coincident with the ACTIVE command  
are used to select the bank and row to be accessed (BA0, BA1  
select the bank; A0-12 select the row). The address bits registered  
coincident with the READ or WRITE command are used to select  
This product is subject to change without notice.  
the starting column location for the burst access.  
Continued on page 4  
DENSITY COMPARISONS  
W364M72V-XSBX  
25  
W364M72V-XSBX  
32  
Area = 800mm2  
I/O Count = 219 Balls  
SAVINGS — Area: 66%  
I/O Count: 55%  
Discrete Approach (mm)  
11.9  
11.9  
11.9  
11.9  
11.9  
11.9  
11.9  
11.9  
11.9  
54  
TSOP  
54  
TSOP  
54  
TSOP  
54  
TSOP  
54  
TSOP  
54  
TSOP  
54  
TSOP  
54  
TSOP  
54  
TSOP  
22.3  
Area 9 x 265mm2 = 2,385mm2  
I/O Count 9 x 54 pins = 486 pins  
Microsemi Corporation reserves the right to change products or specifications without notice.  
February 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 4  
1
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com  
www.microsemi.com  
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与W364M72V-100SBC相关器件

型号 品牌 获取价格 描述 数据表
W364M72V-100SBI WEDC

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 		64Mx72 Synchronous DRAM
W364M72V-100SBI MICROSEMI

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 		Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
W364M72V-100SBM WEDC

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 		64Mx72 Synchronous DRAM
W364M72V-100SBM MICROSEMI

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 		Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
W364M72V-125SB WEDC

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 		64Mx72 Synchronous DRAM
W364M72V-125SBC WEDC

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 		64Mx72 Synchronous DRAM
W364M72V-125SBI WEDC

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 		64Mx72 Synchronous DRAM
W364M72V-125SBI MICROSEMI

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 		Synchronous DRAM, 64MX72, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
W364M72V-125SBM WEDC

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 		64Mx72 Synchronous DRAM
W364M72V-133SBC MICROSEMI

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 		Synchronous DRAM, 64MX72, 5.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

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