5秒后页面跳转
W3630TE650 PDF预览

W3630TE650

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE 驱动二极管驱动器
页数 文件大小 规格书
10页 409K
描述
我们种类繁多的整流器二极管可提供一流的性能和可靠性。 可提供阻断电压在200V至7.2kV之间的器件。 这些器件经过优化,具有较低的传导损耗,非常适合不超过400Hz的线路频率应用,包括变速驱动器

W3630TE650 数据手册

 浏览型号W3630TE650的Datasheet PDF文件第2页浏览型号W3630TE650的Datasheet PDF文件第3页浏览型号W3630TE650的Datasheet PDF文件第4页浏览型号W3630TE650的Datasheet PDF文件第5页浏览型号W3630TE650的Datasheet PDF文件第6页浏览型号W3630TE650的Datasheet PDF文件第7页 
Date:- 11th January 2023  
Data Sheet Issue:- A3  
Rectifier Diode  
Types W3630T#620 to W3630T#680  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VRRM  
VRSM  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
6200-6800  
6300-6900  
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IF(AV)M  
IF(AV)M  
IF(AV)M  
Maximum average forward current, Tsink=55°C, (note 2)  
Maximum average forward current. Tsink=100°C, (note 2)  
Maximum average forward current. Tsink=100°C, (note 3)  
3910  
2630  
A
A
1425  
A
IF(RMS)M Nominal RMS forward current, Tsink=25°C, (note 2)  
7235  
A
IF(d.c.)  
IFSM  
IFSM2  
I2t  
D.C. forward current, Tsink=25°C, (note 4)  
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
Operating temperature range  
6555  
A
35  
kA  
kA  
A2s  
A2s  
°C  
°C  
38.5  
6.125×106  
7.411×106  
-40 to +150  
-55 to +150  
I2t  
Tj op  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 150°C Tj initial.  
Provisional Data Sheet. Types W3630T#620 to W3630T#680 Issue A3  
Page 1 of 10  
January 2023  

与W3630TE650相关器件

型号 品牌 获取价格 描述 数据表
W3630TJ680 LITTELFUSE

获取价格

我们种类繁多的整流器二极管可提供一流的性能和可靠性。 可提供阻断电压在200V至7.2kV
W364M72V-100SB WEDC

获取价格

64Mx72 Synchronous DRAM
W364M72V-100SBC WEDC

获取价格

64Mx72 Synchronous DRAM
W364M72V-100SBC MICROSEMI

获取价格

Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
W364M72V-100SBI WEDC

获取价格

64Mx72 Synchronous DRAM
W364M72V-100SBI MICROSEMI

获取价格

Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
W364M72V-100SBM WEDC

获取价格

64Mx72 Synchronous DRAM
W364M72V-100SBM MICROSEMI

获取价格

Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
W364M72V-125SB WEDC

获取价格

64Mx72 Synchronous DRAM
W364M72V-125SBC WEDC

获取价格

64Mx72 Synchronous DRAM