Datasheet > 存储 > DRAM> W332M72V-125BM

W332M72V-125BM

更新时间： 2024-11-08 03:17:51

品牌	Logo	应用领域
WEDC		存储内存集成电路动态存储器
页数	文件大小	规格书
15页	257K
描述
32Mx72 Synchronous DRAM

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W332M72V-125BM 数据手册

W332M72V-XBX

White Electronic Designs

32Mx72 Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

ꢀ

High Frequency = 100, 125, 133MHz

Package:

The 256MByte (2Gb) SDRAM is a high-speed CMOS,

dynamic random-access, memory using 5 chips containing

536,870,912 bits. Each chip is internally conﬁgured as a

quad-bank DRAM with a synchronous interface. Each of

the chip’s 134,217,728-bit banks is organized as 8,192

rows by 1,024 columns by 16 bits.

• 219 Plastic Ball Grid Array (PBGA), 32 x 25mm

3.3V 0.3V power supply

Fully Synchronous; all signals registered on positive

edge of system clock cycle

ꢀ

Read and write accesses to the SDRAM are burst ori-

ented; accesses start at a selected location and continue

for a programmed number of locations in a programmed

sequence. Accesses begin with the registration of an

ACTIVE command, which is then followed by a READ or

WRITE command. The address bits registered coincident

with the ACTIVE command are used to select the bank

and row to be accessed (BA0, BA1 select the bank; A0-

12 select the row). The address bits registered coincident

with the READ or WRITE command are used to select the

starting column location for the burst access.

ꢀ

Internal pipelined operation; column address can be

changed every clock cycle

ꢀ

Internal banks for hiding row access/precharge

Programmable Burst length 1,2,4,8 or full page

8,192 refresh cycles

Commercial, Industrial and Military Temperature

Ranges

ꢀ

Organized as 32M x 72

Weight: W332M72V-XBX – 3.5 grams typical

The SDRAM provides for programmable READ or WRITE

burst lengths of 1, 2, 4 or 8 locations, or the full page, with

a burst terminate option.AnAUTO PRECHARGE function

may be enabled to provide a self-timed row precharge that

is initiated at the end of the burst sequence.

BENEFITS

ꢀ

40% SPACE SAVINGS

Reduced part count

Reduced I/O count

• 19% I/O Reduction

The 2Gb SDRAM uses an internal pipelined architecture to

achieve high-speed operation. This architecture is compatible

with the 2n rule of prefetch architectures, but it also allows

the column address to be changed on every clock cycle to

achieve a high-speed, fully random access. Precharging

one bank while accessing one of the other three banks

will hide the precharge cycles and provide seamless, high-

speed, random-access operation.

ꢀ

Reduced trace lengths for lower parasitic

capacitance

ꢀ Suitable for hi-reliability applications

ꢀ

Laminate interposer for optimum TCE match

ꢀ

Pinout compatible with lower desities

WEDPN4M72V-XB2X, WEDPN8M72V-XB2X and

WEDPN16M72V-XB2X

The 2Gb SDRAM is designed to operate at 3.3V. An auto

refresh mode is provided, along with a power-saving,

power-down mode.

* This product is subject to change without notice.

Discrete Approach

11.9

ACTUAL SIZE

11.9

TSOP

White Electronic Designs

22.3

W332M72V-XBX

Area

5 x 265mm²= 1328mm²

5 x 54 pins = 270 pins

800mm²

219 Balls

40%

19%

I/O

Count

March 2006

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...15

中文翻译

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与W332M72V-125BM相关器件

型号	品牌	获取价格	描述	数据表
W332M72V-125SBC	WEDC	获取价格	32Mx72 Synchronous DRAM
W332M72V-125SBC	MICROSEMI	获取价格	Synchronous DRAM, 32MX72, 6ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208
W332M72V-125SBI	WEDC	获取价格	32Mx72 Synchronous DRAM
W332M72V-125SBI	MICROSEMI	获取价格	Synchronous DRAM, 32MX72, 6ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208
W332M72V-125SBM	WEDC	获取价格	32Mx72 Synchronous DRAM
W332M72V-125SBM	MICROSEMI	获取价格	Synchronous DRAM, 32MX72, 6ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208
W332M72V-133BC	WEDC	获取价格	32Mx72 Synchronous DRAM
W332M72V-133BI	WEDC	获取价格	32Mx72 Synchronous DRAM
W332M72V-133BM	WEDC	获取价格	32Mx72 Synchronous DRAM
W332M72V-133SBC	MICROSEMI	获取价格	Synchronous DRAM, 32MX72, 5.5ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208

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