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W29EE512T-12B

更新时间： 2024-09-18 22:36:39

品牌	Logo	应用领域
华邦 - WINBOND		/
页数	文件大小	规格书
22页	291K
描述
64K X 8 CMOS FLASH MEMORY

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W29EE512T-12B 数据手册

W29EE512

´ 8 CMOS FLASH MEMORY

64K

GENERAL DESCRIPTION

The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device

can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not

required. The unique cell architecture of the W29EE512 results in fast program/erase operations with

extremely low current consumption (compared to other comparable 5-volt flash memory products). The

device can also be programmed and erased using standard EPROM programmers.

FEATURES

· Single 5-volt program and erase operations

· Fast page-write operations

· Low power consumption

- Active current: 50 mA (max.)

- Standby current: 100 mA (max.)

- 128 bytes per page

· Automatic program timing with internal VPP

generation

- Page program cycle: 10 mS (max.)

- Effective byte-program cycle time: 39 mS

- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Read access time: 70/90/120 nS

· Typical page program/erase cycles: 1K/10K

· Ten-year data retention

· End of program detection

- Toggle bit

- Data polling

· Latched address and data

· TTL compatible I/O

· JEDEC standard byte-wide pinouts

· Software and hardware data protection

· Available packages: 32-pin PLCC, TSOP and

VSOP

Publication Release Date: February 18, 2002

- 1 -

Revision A7

12 3 4 5 6 7...22

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