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W29EE012 PDF预览

W29EE012

更新时间: 2024-11-28 22:25:55
品牌 Logo 应用领域
华邦 - WINBOND /
页数 文件大小 规格书
19页 239K
描述
128K X 8 CMOS FLASH MEMORY

W29EE012 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:DIEReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:150 ns
JESD-30 代码:R-XUUC-N内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:RECTANGULAR
封装形式:UNCASED CHIP并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子位置:UPPER
类型:NOR TYPE最长写入周期时间 (tWC):10 ms
Base Number Matches:1

W29EE012 数据手册

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W29EE012  
´ 8 CMOS FLASH MEMORY  
128K  
GENERAL DESCRIPTION  
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The  
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is  
not required. The unique cell architecture of the W29EE012 results in fast program/erase operations  
with extremely low current consumption (compared to other comparable 5-volt flash memory products).  
The device can also be programmed and erased using standard EPROM programmers.  
FEATURES  
· Single 5-volt program and erase operations  
· Fast page-write operations  
· Low power consumption  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- 128 bytes per page  
- Page program cycle: 10 mS (max.)  
- Effective byte-program cycle time: 39 mS  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Page program/erase cycles: 1,000  
· Ten-year data retention  
· Automatic program timing with internal VPP  
generation  
· End of program detection  
- Toggle bit  
- Data polling  
· Latched address and data  
· TTL compatible I/O  
· JEDEC standard byte-wide pinouts  
· Software and hardware data protection  
Publication Release Date: March 26, 2002  
- 1 -  
Revision A3  

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