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W29EE011P90Z PDF预览

W29EE011P90Z

更新时间: 2024-09-19 13:15:35
品牌 Logo 应用领域
华邦 - WINBOND 内存集成电路
页数 文件大小 规格书
20页 183K
描述
Flash, 128KX8, 90ns, PQCC32, LEAD FREE, PLASTIC, LCC-32

W29EE011P90Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:LEAD FREE, PLASTIC, LCC-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.49
最长访问时间:90 ns命令用户界面:NO
数据轮询:YES耐久性:1000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1K端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):250电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:128
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:11.43 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

W29EE011P90Z 数据手册

 浏览型号W29EE011P90Z的Datasheet PDF文件第2页浏览型号W29EE011P90Z的Datasheet PDF文件第3页浏览型号W29EE011P90Z的Datasheet PDF文件第4页浏览型号W29EE011P90Z的Datasheet PDF文件第5页浏览型号W29EE011P90Z的Datasheet PDF文件第6页浏览型号W29EE011P90Z的Datasheet PDF文件第7页 
W29EE011  
128K ´ 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
´
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K 8 bits. The  
PP  
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V is  
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations  
with extremely low current consumption (compared to other comparable 5-volt flash memory  
products). The device can also be programmed and erased using standard EPROM programmers.  
FEATURES  
·
·
·
Single 5-volt program and erase operations  
Fast page-write operations  
Low power consumption  
-
-
Active current: 25 mA (typ.)  
- 128 bytes per page  
m
Standby current: 20 A (typ.)  
PP  
·
·
-
-
-
Page program cycle: 10 mS (max.)  
Automatic program timing with internal V  
generation  
m
Effective byte-program cycle time: 39 S  
Optional software-protected data write  
End of program detection  
-
-
Toggle bit  
·
·
·
·
·
Fast chip-erase operation: 50 mS  
Read access time: 90/150 nS  
Page program/erase cycles: 1K/10K  
Ten-year data retention  
Data polling  
·
·
·
·
Latched address and data  
TTL compatible I/O  
JEDEC standard byte-wide pinouts  
Software and hardware data protection  
Available packages: 32-pin 600 mil DIP,  
TSOP, and PLCC  
Publication Release Date: July 1999  
Revision A12  
- 1 -  

W29EE011P90Z 替代型号

型号 品牌 替代类型 描述 数据表
AM29F010B-90JD SPANSION

功能相似

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90JC AMD

功能相似

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
W29EE011P-90 WINBOND

功能相似

128K X 8 CMOS FLASH MEMORY

与W29EE011P90Z相关器件

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W29EE011Q-15 WINBOND

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Flash, 128KX8, 150ns, PDSO32, 8 X 14 MM, STSOP-32
W29EE011Q15B WINBOND

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Flash, 128KX8, 150ns, PDSO32, 8 X 14 MM, STSOP-32
W29EE011Q-90 WINBOND

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Flash, 128KX8, 90ns, PDSO32, 8 X 14 MM, STSOP-32
W29EE011Q90B WINBOND

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Flash, 128KX8, 90ns, PDSO32, 8 X 14 MM, STSOP-32
W29EE011Q90Z WINBOND

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Flash, 128KX8, 90ns, PDSO32, 8 X 14 MM, LEAD FREE, STSOP-32
W29EE011S-12 WINBOND

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Flash, 128KX8, 120ns, PDSO32, 0.450 INCH, SOP-32
W29EE011S-12A WINBOND

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Flash, 128KX8, 120ns, PDSO32, 0.450 INCH, SOP-32
W29EE011S-15 WINBOND

获取价格

Flash, 128KX8, 150ns, PDSO32, 0.450 INCH, SOP-32
W29EE011S-15A WINBOND

获取价格

Flash, 128KX8, 150ns, PDSO32, 0.450 INCH, SOP-32
W29EE011S-90 WINBOND

获取价格

Flash, 128KX8, 90ns, PDSO32, 0.450 INCH, SOP-32