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W29EE011P90B PDF预览

W29EE011P90B

更新时间: 2024-11-07 22:10:15
品牌 Logo 应用领域
华邦 - WINBOND 内存集成电路
页数 文件大小 规格书
20页 183K
描述
128K X 8 CMOS FLASH MEMORY

W29EE011P90B 技术参数

生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.52
Is Samacsys:N最长访问时间:90 ns
其他特性:HARDWARE AND SOFTWARE DATA PROTECTION; 10-YEARS DATA RETENTION; 10K PROGRAM/ERASE CYCLE命令用户界面:NO
数据轮询:YES数据保留时间-最小值:10
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1K
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:128
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
切换位:YES类型:NOR TYPE
宽度:11.43 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

W29EE011P90B 数据手册

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W29EE011  
128K ´ 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
´
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K 8 bits. The  
PP  
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V is  
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations  
with extremely low current consumption (compared to other comparable 5-volt flash memory  
products). The device can also be programmed and erased using standard EPROM programmers.  
FEATURES  
·
·
·
Single 5-volt program and erase operations  
Fast page-write operations  
Low power consumption  
-
-
Active current: 25 mA (typ.)  
- 128 bytes per page  
m
Standby current: 20 A (typ.)  
PP  
·
·
-
-
-
Page program cycle: 10 mS (max.)  
Automatic program timing with internal V  
generation  
m
Effective byte-program cycle time: 39 S  
Optional software-protected data write  
End of program detection  
-
-
Toggle bit  
·
·
·
·
·
Fast chip-erase operation: 50 mS  
Read access time: 90/150 nS  
Page program/erase cycles: 1K/10K  
Ten-year data retention  
Data polling  
·
·
·
·
Latched address and data  
TTL compatible I/O  
JEDEC standard byte-wide pinouts  
Software and hardware data protection  
Available packages: 32-pin 600 mil DIP,  
TSOP, and PLCC  
Publication Release Date: July 1999  
Revision A12  
- 1 -  

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W29EE011Q-90 WINBOND

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Flash, 128KX8, 90ns, PDSO32, 8 X 14 MM, STSOP-32
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W29EE011S-15 WINBOND

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