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W29EE011P PDF预览

W29EE011P

更新时间: 2024-09-18 22:25:55
品牌 Logo 应用领域
华邦 - WINBOND /
页数 文件大小 规格书
20页 183K
描述
128K X 8 CMOS FLASH MEMORY

W29EE011P 数据手册

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W29EE011  
128K ´ 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
´
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K 8 bits. The  
PP  
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V is  
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations  
with extremely low current consumption (compared to other comparable 5-volt flash memory  
products). The device can also be programmed and erased using standard EPROM programmers.  
FEATURES  
·
·
·
Single 5-volt program and erase operations  
Fast page-write operations  
Low power consumption  
-
-
Active current: 25 mA (typ.)  
- 128 bytes per page  
m
Standby current: 20 A (typ.)  
PP  
·
·
-
-
-
Page program cycle: 10 mS (max.)  
Automatic program timing with internal V  
generation  
m
Effective byte-program cycle time: 39 S  
Optional software-protected data write  
End of program detection  
-
-
Toggle bit  
·
·
·
·
·
Fast chip-erase operation: 50 mS  
Read access time: 90/150 nS  
Page program/erase cycles: 1K/10K  
Ten-year data retention  
Data polling  
·
·
·
·
Latched address and data  
TTL compatible I/O  
JEDEC standard byte-wide pinouts  
Software and hardware data protection  
Available packages: 32-pin 600 mil DIP,  
TSOP, and PLCC  
Publication Release Date: July 1999  
Revision A12  
- 1 -  

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