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W29EE011-15N PDF预览

W29EE011-15N

更新时间: 2024-09-18 23:41:31
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其他 - ETC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 297K
描述
EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC

W29EE011-15N 数据手册

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W29EE011  
´ 8 CMOS FLASH MEMORY  
128K  
GENERAL DESCRIPTION  
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The  
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is  
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations  
with extremely low current consumption (compared to other comparable 5-volt flash memory products).  
The device can also be programmed and erased using standard EPROM programmers.  
FEATURES  
· Single 5-volt program and erase operations  
· Fast page-write operations  
· Low power consumption  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- 128 bytes per page  
- Page program cycle: 10 mS (max.)  
- Effective byte-program cycle time: 39 mS  
- Optional software-protected data write  
· Fast chip-erase operation: 50 mS  
· Read access time: 90/150 nS  
· Automatic program timing with internal VPP  
generation  
· End of program detection  
- Toggle bit  
- Data polling  
· Latched address and data  
· TTL compatible I/O  
· JEDEC standard byte-wide pinouts  
· Page program/erase cycles: 1K/10K  
· Ten-year data retention  
· Software and hardware data protection  
· Available packages: 32-pin 600 mil DIP, TSOP  
(8 x 20 mm), STSOP (8 x 14 mm), and PLCC  
Publication Release Date: February 19, 2002  
- 1 -  
Revision A15  

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