Datasheet > W27E010S-55

W27E010S-55

更新时间： 2024-11-21 23:41:31

品牌	Logo	应用领域
华邦 - WINBOND		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
15页	195K
描述
x8 EEPROM

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中文翻译

获取价格

数据手册

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W27E010S-55 数据手册

W27E010

128K ´ 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION

The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 131072 8 bits that operates on a single 5 volt power supply. The W27E010

provides an electrical chip erase function.

FEATURES

High speed access time:

45/55/70/90/120 nS (max.)

+14V erase/+12V programming voltage

Fully static operation

Read operating current: 30 mA (typ.)

Erase/Programming operating current:

1 mA (typ.)

All inputs and outputs directly TTL/CMOS

compatible

Three-state outputs

Standby current: 5 mA (typ.)

Available packages: 32-pin 600 mil DIP,

450 mil SOP and PLCC

Single 5V power supply

PIN CONFIGURATIONS

BLOCK DIAGRAM

PGM

Vcc

PGM

Vpp

A16

A15

A12

OUTPUT

BUFFER

CONTROL

A14

A13

CORE

ARRAY

DECODER

A11

A16

A10

GND

PIN DESCRIPTION

SYMBOL

DESCRIPTION

Address Inputs

Data Inputs/Outputs

A0 A16

Q0 Q7

A14

A13

Chip Enable

Output Enable

Program Enable

32-pin PLCC

A11

A10

PGM

Program/Erase Supply Voltage

Power Supply

Ground

GND

No Connection

Publication Release Date: June 2000

Revision A6

- 1 -

12 3 4 5 6 7...15

中文翻译

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