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W27E010P-90 PDF预览

W27E010P-90

更新时间: 2024-11-21 23:41:31
品牌 Logo 应用领域
华邦 - WINBOND 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
15页 195K
描述
x8 EEPROM

W27E010P-90 数据手册

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W27E010  
128K ´ 8 ELECTRICALLY ERASABLE EPROM  
GENERAL DESCRIPTION  
The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only  
´
Memory organized as 131072 8 bits that operates on a single 5 volt power supply. The W27E010  
provides an electrical chip erase function.  
FEATURES  
·
·
·
·
High speed access time:  
45/55/70/90/120 nS (max.)  
+14V erase/+12V programming voltage  
Fully static operation  
·
·
Read operating current: 30 mA (typ.)  
Erase/Programming operating current:  
1 mA (typ.)  
All inputs and outputs directly TTL/CMOS  
compatible  
·
·
Three-state outputs  
·
·
Standby current: 5 mA (typ.)  
Available packages: 32-pin 600 mil DIP,  
450 mil SOP and PLCC  
Single 5V power supply  
PIN CONFIGURATIONS  
BLOCK DIAGRAM  
Q0  
.
.
PGM  
Vcc  
PGM  
NC  
Vpp  
A16  
A15  
A12  
A7  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
1
OUTPUT  
BUFFER  
CE  
CONTROL  
2
Q7  
OE  
3
A14  
A13  
A8  
4
5
A0  
.
A6  
6
CORE  
ARRAY  
A5  
7
A9  
DECODER  
A11  
A4  
.
8
A16  
A3  
9
OE  
A2  
10  
11  
12  
13  
14  
A10  
V
A1  
CC  
CE  
Q7  
A0  
GND  
Q0  
Q6  
Q5  
V
PP  
Q1  
Q2  
18  
17  
Q4  
Q3  
15  
16  
GND  
PIN DESCRIPTION  
/
A
1
6
A
1
2
A
1
5
V
p
p
V
c
c
P
N
C
SYMBOL  
DESCRIPTION  
G
M
Address Inputs  
Data Inputs/Outputs  
-
A0 A16  
3
2
3
1
4
3
2
1
3
0
-
Q0 Q7  
5
6
7
8
9
10  
11  
12  
13  
29  
28  
27  
26  
25  
24  
23  
22  
21  
A14  
A13  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Q0  
Chip Enable  
CE  
OE  
A9  
Output Enable  
Program Enable  
32-pin PLCC  
A11  
OE  
A10  
CE  
Q7  
PGM  
V
1
8
1
9
2
0
1
7
1
4
1
5
1
6
PP  
Program/Erase Supply Voltage  
Power Supply  
Ground  
CC  
V
Q
1
Q
2
G
N
D
Q
3
Q
4
Q
5
Q
6
GND  
NC  
No Connection  
Publication Release Date: June 2000  
Revision A6  
- 1 -  

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